Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | BSS8402 [1] |
| Configuration | N and P-Channel [1] |
| Current - Continuous Drain (Id) @ 25°C | 115mA, 130mA [1] |
| FET Feature | Logic Level Gate [1] |
| Drain to Source Voltage (Vdss) | 60V, 50V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V, 45pF @ 25V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 200mW [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 13.5Ohm @ 500mA, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA [1] |
| Package / Case | 6-TSSOP, SC-88, SOT-363 [1] |
Specification references[1]Diodes Incorporated BSS8402DWQ-7 vendor product record ↗
