Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 1.5 A [2] |
| Base Product Number | BSR50 [2] |
| Current - Collector Cutoff (Max) | 50nA (ICBO) [2] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V [2] |
| Mfr | onsemi [2] |
| Mounting Type | Through Hole [2] |
| Operating Temperature | -55°C ~ 150°C (TJ) [2] |
| Power - Max | 625 mW [2] |
| Product Status | Obsolete [2] |
| Transistor Type | NPN - Darlington [2] |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 4mA, 1A [2] |
| Voltage - Collector Emitter Breakdown (Max) | 45 V [2] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) [2] |
Specification references[1]BSR50 delivered document ↗[2]onsemi BSR50 vendor product record ↗
