MPNHarborRFQ 0
BS107PSTOA representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

Diodes Incorporated · exact orderable part

BS107PSTOA

MOSFET N-CH 200V 120MA E-LINE

FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
120mA (Ta)
Rds On (Max) @ Id, Vgs
30Ohm @ 100mA, 5V
Drive Voltage (Max Rds On, Min Rds On)
2.6V, 5V
Vgs (Max)
±20V
Power Dissipation (Max)
500mW (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseE-Line-3
Mounting typeThrough Hole
PackingTape & Reel (TR)

Technical parameters

Technical specifications

13 normalized values · 1 validated source

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ParameterValue
Current - Continuous Drain (Id) @ 25°C120mA (Ta) [1]
Drain to Source Voltage (Vdss)200 V [1]
Drive Voltage (Max Rds On, Min Rds On)2.6V, 5V [1]
FET TypeN-Channel [1]
MfrDiodes Incorporated [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)500mW (Ta) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs30Ohm @ 100mA, 5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Package / CaseE-Line-3 [1]
Specification references[1]Diodes Incorporated BS107PSTOA vendor product record ↗

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ManufacturerDiodes IncorporatedView brand page →CategoryTransistors - FETs, MOSFETs - SingleView category page →

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