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BDV65BG representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

onsemi · exact orderable part

BDV65BG

TRANS NPN DARL 100V 10A TO247-3

Transistor Type
NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)
100 V
Current - Collector (Ic) (Max)
10 A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic
2V @ 20mA, 5A
Power - Max
125 W
Current - Collector Cutoff (Max)
1mA
Operating Temperature
-65°C~150°C(TJ)
Product Status
Obsolete
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-247-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

13 normalized values · 1 validated source

Report a data issue
ParameterValue
Current - Collector (Ic) (Max)10 A [1]
Base Product NumberBDV65 [1]
Current - Collector Cutoff (Max)1mA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 4V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-65°C~150°C(TJ) [1]
Power - Max125 W [1]
Product StatusObsolete [1]
Transistor TypeNPN - Darlington [1]
Vce Saturation (Max) @ Ib, Ic2V @ 20mA, 5A [1]
Voltage - Collector Emitter Breakdown (Max)100 V [1]
Package / CaseTO-247-3 [1]
Specification references[1]onsemi BDV65BG vendor product record ↗

Catalog relationships

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This page describes one orderable part. A family page helps select suffixes but never carries assumed stock or a price.

ManufactureronsemiView brand page →CategoryTransistors - Bipolar (BJT) - SingleView category page →

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