BD810G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

BD810G

TRANS PNP 80V 10A TO220

Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
80 V
Current - Collector (Ic) (Max)
10 A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 4A, 2V
Vce Saturation (Max) @ Ib, Ic
1.1V @ 300mA, 3A
Frequency - Transition
1.5MHz
Power - Max
90 W
Current - Collector Cutoff (Max)
1mA (ICBO)
Operating Temperature
-55°C ~ 150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-220-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

BD810G technical parameters
ParameterValue
Current - Collector (Ic) (Max)10 A [1]
Base Product NumberBD810 [1]
Current - Collector Cutoff (Max)1mA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 4A, 2V [1]
Frequency - Transition1.5MHz [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max90 W [1]
Product StatusObsolete [1]
Transistor TypePNP [1]
Vce Saturation (Max) @ Ib, Ic1.1V @ 300mA, 3A [1]
Voltage - Collector Emitter Breakdown (Max)80 V [1]
Package / CaseTO-220-3 [1]

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