Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 10 A [1] |
| Base Product Number | BD810 [1] |
| Current - Collector Cutoff (Max) | 1mA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 4A, 2V [1] |
| Frequency - Transition | 1.5MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 90 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 300mA, 3A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 80 V [1] |
| Package / Case | TO-220-3 [1] |
Specification references[1]onsemi BD810G vendor product record ↗
