Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 4 A [1] |
| Base Product Number | BD676 [1] |
| Current - Collector Cutoff (Max) | 500µA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 40 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | PNP - Darlington [1] |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 45 V [1] |
| Package / Case | TO-225AA, TO-126-3 [1] |
Specification references[1]onsemi BD676G vendor product record ↗
