BD537J representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

BD537J

TRANS NPN 80V 8A TO220-3

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
80 V
Current - Collector (Ic) (Max)
8 A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Frequency - Transition
12MHz
Power - Max
50 W
Current - Collector Cutoff (Max)
100µA
Operating Temperature
150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-220-3
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

BD537J technical parameters
ParameterValue
Current - Collector (Ic) (Max)8 A [1]
Base Product NumberBD537 [1]
Current - Collector Cutoff (Max)100µA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 2A, 2V [1]
Frequency - Transition12MHz [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature150°C (TJ) [1]
Power - Max50 W [1]
Part StatusObsolete [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A [1]
Voltage - Collector Emitter Breakdown (Max)80 V [1]
Package / CaseTO-220-3 [1]

Catalog relationships

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