Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 4 A [1] |
| Base Product Number | BD439 [1] |
| Current - Collector Cutoff (Max) | 100µA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 5V [1] |
| Frequency - Transition | 3MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | 150°C(TJ) [1] |
| Power - Max | 36 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 60 V [1] |
| Package / Case | TO-225AA, TO-126-3 [1] |
Specification references[1]onsemi BD439S vendor product record ↗
