BD435 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

BD435

TRANS NPN 32V 4A TO126

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
32 V
Current - Collector (Ic) (Max)
4 A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA, 1V
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Frequency - Transition
3MHz
Power - Max
36 W
Current - Collector Cutoff (Max)
100µA (ICBO)
Operating Temperature
-55°C ~ 150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-225AA, TO-126-3
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

BD435 technical parameters
ParameterValue
Current - Collector (Ic) (Max)4 A [1]
Base Product NumberBD435 [1]
Current - Collector Cutoff (Max)100µA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 500mA, 1V [1]
Frequency - Transition3MHz [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max36 W [1]
Product StatusObsolete [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A [1]
Voltage - Collector Emitter Breakdown (Max)32 V [1]
Package / CaseTO-225AA, TO-126-3 [1]

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