Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Channel Type | Independent [1] |
| Current - Peak Output (Source, Sink) | 3.5A, 4.5A [1] |
| Driven Configuration | Half-Bridge [1] |
| Gate Type | N-Channel MOSFET [1] |
| Input Type | Non-Inverting [1] |
| High Side Voltage - Max (Bootstrap) | 100 V [1] |
| Logic Voltage - VIL, VIH | 1.7V, 1.5V [1] |
| Mfr | Rohm Semiconductor [1] |
| Mounting Type | Surface Mount [1] |
| Number of Drivers | 2 [1] |
| Operating Temperature | -40°C~125°C [1] |
| Product Status | Active [1] |
| Rise / Fall Time (Typ) | 8ns, 6ns [1] |
| Voltage - Supply | 7.5V ~ 14.5V [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad [1] |
Specification references[1]Rohm Semiconductor BD2320UEFJ-LAE2 vendor product record ↗
