BD2320EFJ-LAE2 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Rohm Semiconductor · exact orderable part

BD2320EFJ-LAE2

100 V VB 3.5 A/4.5 A PEAK CURREN

Driven Configuration
High-Side and Low-Side
Gate Type
N-Channel MOSFET
Channel Type
Independent
Number of Drivers
2
Voltage - Supply
7.5V ~ 14.5V
Current - Peak Output (Source, Sink)
3.5A, 4.5A
Logic Voltage - VIL, VIH
1.7V, 1.5V
Input Type
Non-Inverting
High Side Voltage - Max (Bootstrap)
100 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerRohm Semiconductor
Package / case8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

BD2320EFJ-LAE2 technical parameters
ParameterValue
Channel TypeIndependent [1]
Current - Peak Output (Source, Sink)3.5A, 4.5A [1]
Driven ConfigurationHigh-Side and Low-Side [1]
Gate TypeN-Channel MOSFET [1]
Input TypeNon-Inverting [1]
High Side Voltage - Max (Bootstrap)100 V [1]
Logic Voltage - VIL, VIH1.7V, 1.5V [1]
MfrRohm Semiconductor [1]
Mounting TypeSurface Mount [1]
Number of Drivers2 [1]
Operating Temperature-40°C~125°C(TA) [1]
Product StatusActive [1]
Rise / Fall Time (Typ)8ns, 6ns [1]
Voltage - Supply7.5V ~ 14.5V [1]
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad [1]

Catalog relationships

Keep family and exact MPN intent separate.

This page describes one orderable part. A family page helps select suffixes but never carries assumed stock or a price.

Related exact parts

Other published parts

Browse exact MPNs and compare their specifications. These links do not imply compatibility or interchangeability.