Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 1 A [1] |
| Base Product Number | BD180 [1] |
| Current - Collector Cutoff (Max) | 1mA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V [1] |
| Frequency - Transition | 3MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -65°C ~ 150°C (TJ) [1] |
| Power - Max | 30 W [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 100mA, 1A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 80 V [1] |
| Package / Case | TO-225AA, TO-126-3 [1] |
Specification references[1]onsemi BD180G vendor product record ↗
