Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 1.2 A [2] |
| Base Product Number | BCV27 [2] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [2] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V [2] |
| Frequency - Transition | 220MHz [2] |
| Mfr | onsemi [2] |
| Mounting Type | Surface Mount [2] |
| Operating Temperature | -55°C~150°C(TJ) [2] |
| Power - Max | 350 mW [2] |
| Product Status | Active [2] |
| Transistor Type | NPN - Darlington [2] |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA [2] |
| Voltage - Collector Emitter Breakdown (Max) | 30 V [2] |
| Package / Case | TO-236-3, SC-59, SOT-23-3 [2] |
Specification references[1]BCV27 delivered document ↗[2]onsemi BCV27 vendor product record ↗
