Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 1.2 A [1] |
| Base Product Number | BCV26 [1] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V [1] |
| Frequency - Transition | 220MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 350 mW [1] |
| Product Status | Active [1] |
| Transistor Type | PNP - Darlington [1] |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 30 V [1] |
| Package / Case | TO-236-3, SC-59, SOT-23-3 [1] |
Specification references[1]onsemi BCV26 vendor product record ↗
