Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | BCM857 [1] |
| Current - Collector (Ic) (Max) | 100mA [1] |
| Current - Collector Cutoff (Max) | 15nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V [1] |
| Frequency - Transition | 175MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -65°C ~ 150°C (TJ) [1] |
| Power - Max | 357mW [1] |
| Product Status | Active [1] |
| Transistor Type | 2 PNP (Dual) [1] |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 45V [1] |
| Package / Case | SOT-563, SOT-666 [1] |
Specification references[1]Diodes Incorporated BCM857BV-7 vendor product record ↗
