Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA [1] |
| Base Product Number | BC858 [1] |
| Current - Collector Cutoff (Max) | 15nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V [1] |
| Frequency - Transition | 200MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -65°C ~ 150°C (TJ) [1] |
| Power - Max | 300 mW [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 30 V [1] |
| Package / Case | TO-236-3, SC-59, SOT-23-3 [1] |
Specification references[1]Diodes Incorporated BC858C-7-F vendor product record ↗
