Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA [1] |
| Current - Collector Cutoff (Max) | 15nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V [1] |
| Frequency - Transition | 100MHz [1] |
| Mfr | NXP USA Inc. [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | 150°C(TJ) [1] |
| Power - Max | 200 mW [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Series | Automotive, AEC-Q101 [1] |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 65 V [1] |
Specification references[1]NXP USA Inc. BC856W,135 vendor product record ↗
