Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | BC856 [1] |
| Current - Collector (Ic) (Max) | 100mA [1] |
| Current - Collector Cutoff (Max) | 15nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V [1] |
| Frequency - Transition | 100MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Grade | Automotive [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 200mW [1] |
| Product Status | Active [1] |
| Transistor Type | 2 PNP (Dual) [1] |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA [1] |
| Qualification | AEC-Q101 [1] |
| Voltage - Collector Emitter Breakdown (Max) | 65V [1] |
| Package / Case | 6-TSSOP, SC-88, SOT-363 [1] |
Specification references[1]Diodes Incorporated BC856ASQ-7-F vendor product record ↗
