BC373G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

BC373G

TRANS NPN DARL 80V 1A TO92

Transistor Type
NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)
80 V
Current - Collector (Ic) (Max)
1 A
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic
1.1V @ 250µA, 250mA
Frequency - Transition
200MHz
Power - Max
625 mW
Current - Collector Cutoff (Max)
100nA (ICBO)
Operating Temperature
-55°C ~ 150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-226-3, TO-92-3 Long Body
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

BC373G technical parameters
ParameterValue
Current - Collector (Ic) (Max)1 A [1]
Base Product NumberBC373 [1]
Current - Collector Cutoff (Max)100nA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V [1]
Frequency - Transition200MHz [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max625 mW [1]
Product StatusObsolete [1]
Transistor TypeNPN - Darlington [1]
Vce Saturation (Max) @ Ib, Ic1.1V @ 250µA, 250mA [1]
Voltage - Collector Emitter Breakdown (Max)80 V [1]
Package / CaseTO-226-3, TO-92-3 Long Body [1]

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