BAV20_T50R representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

BAV20_T50R

DIODE GEN PURP 200V 200MA DO35

Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io)
200mA
Voltage - Forward (Vf) (Max) @ If
1.25 V @ 200 mA
Reverse Recovery Time (trr)
50 ns
Speed
Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr
100 nA @ 200 V
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Operating Temperature - Junction
175°C(Max)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseDO-204AH, DO-35, Axial
Mounting typeThrough Hole
PackingTape & Reel (TR)

Technical parameters

Technical specifications

BAV20_T50R technical parameters
ParameterValue
Base Product NumberBAV20 [1]
Capacitance @ Vr, F5pF @ 0V, 1MHz [1]
Current - Average Rectified (Io)200mA [1]
Current - Reverse Leakage @ Vr100 nA @ 200 V [1]
Diode TypeStandard [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction175°C(Max) [1]
Product StatusObsolete [1]
Reverse Recovery Time (trr)50 ns [1]
SpeedSmall Signal =< 200mA (Io), Any Speed [1]
Voltage - DC Reverse (Vr) (Max)200 V [1]
Voltage - Forward (Vf) (Max) @ If1.25 V @ 200 mA [1]
Package / CaseDO-204AH, DO-35, Axial [1]

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