Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | BAS16 [1] |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz [1] |
| Current - Average Rectified (Io) | 155mA [1] |
| Current - Reverse Leakage @ Vr | 500 nA @ 80 V [1] |
| Diode Type | Standard [1] |
| Mfr | NXP USA Inc. [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | 150°C(Max) [1] |
| Product Status | Obsolete [1] |
| Reverse Recovery Time (trr) | 4 ns [1] |
| Speed | Small Signal =< 200mA (Io), Any Speed [1] |
| Voltage - DC Reverse (Vr) (Max) | 100 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA [1] |
Specification references[1]NXP USA Inc. BAS16T,115 vendor product record ↗