Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | B1100 [2] |
| Capacitance @ Vr, F | 80pF @ 4V, 1MHz [2] |
| Current - Average Rectified (Io) | 1A [2] |
| Current - Reverse Leakage @ Vr | 500 µA @ 100 V [2] |
| Diode Type | Schottky [2] |
| Mfr | Diodes Incorporated [2] |
| Mounting Type | Surface Mount [2] |
| Operating Temperature - Junction | -65°C~150°C [2] |
| Product Status | Active [2] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [2] |
| Voltage - DC Reverse (Vr) (Max) | 100 V [2] |
| Voltage - Forward (Vf) (Max) @ If | 790 mV @ 1 A [2] |
| Package / Case | DO-214AA, SMB [2] |
Specification references[1]B1100B-13-F delivered document ↗[2]Diodes Incorporated B1100B-13-F vendor product record ↗
