APT30DQ100BG representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

Microchip Technology · exact orderable part

APT30DQ100BG

DIODE GEN PURP 1KV 30A TO247

Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
1000 V
Current - Average Rectified (Io)
30A
Voltage - Forward (Vf) (Max) @ If
3 V @ 30 A
Reverse Recovery Time (trr)
295 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
100 µA @ 1000 V
Operating Temperature - Junction
-55°C~175°C
Mounting Type
Through Hole
Original manufacturerCommercial terms confirmed per lot
ManufacturerMicrochip Technology
Package / caseTO-247-2
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

APT30DQ100BG technical parameters
ParameterValue
Base Product NumberAPT30DQ100 [1]
Current - Average Rectified (Io)30A [1]
Current - Reverse Leakage @ Vr100 µA @ 1000 V [1]
Diode TypeStandard [1]
MfrMicrochip Technology [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction-55°C~175°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)295 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
Voltage - DC Reverse (Vr) (Max)1000 V [1]
Voltage - Forward (Vf) (Max) @ If3 V @ 30 A [1]
Package / CaseTO-247-2 [1]

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