Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 800 mA [1] |
| Base Product Number | APT27 [1] |
| Current - Collector Cutoff (Max) | 10µA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 100mA, 10V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 800 mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 40mA, 200mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 450 V [1] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads [1] |
Specification references[1]Diodes Incorporated APT27ZTR-G1 vendor product record ↗
