APT27HZTR-G1 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

Diodes Incorporated · exact orderable part

APT27HZTR-G1

TRANS NPN 450V 0.8A TO92

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
450 V
Current - Collector (Ic) (Max)
800 mA
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 300mA, 10V
Vce Saturation (Max) @ Ib, Ic
500mV @ 40mA, 200mA
Power - Max
800 mW
Current - Collector Cutoff (Max)
10µA
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Obsolete
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting typeThrough Hole
PackingCut Tape (CT) Tape & Box (TB)

Technical parameters

Technical specifications

APT27HZTR-G1 technical parameters
ParameterValue
Current - Collector (Ic) (Max)800 mA [1]
Base Product NumberAPT27 [1]
Current - Collector Cutoff (Max)10µA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 300mA, 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max800 mW [1]
Product StatusObsolete [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic500mV @ 40mA, 200mA [1]
Voltage - Collector Emitter Breakdown (Max)450 V [1]
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads [1]

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