Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 4 A [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V [1] |
| Frequency - Transition | 4MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -65°C~150°C(TJ) [1] |
| Power - Max | 25 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 1A, 4A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 450 V [1] |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA [1] |
Specification references[1]Diodes Incorporated APT13005DI-G1 vendor product record ↗
