2SK4209 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

onsemi · exact orderable part

2SK4209

MOSFET N-CH 800V 12A TO3PB

FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Rds On (Max) @ Id, Vgs
1.08Ohm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Power Dissipation (Max)
2.5W (Ta), 190W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-3P-3, SC-65-3
Mounting typeThrough Hole
PackingTray

Technical parameters

Technical specifications

2SK4209 technical parameters
ParameterValue
Base Product Number2SK4209 [1]
Current - Continuous Drain (Id) @ 25°C12A (Ta) [1]
Drain to Source Voltage (Vdss)800 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 30 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature150°C(TJ) [1]
Power Dissipation (Max)2.5W (Ta), 190W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs1.08Ohm @ 6A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±30V [1]
Vgs(th) (Max) @ Id4V @ 1mA [1]
Package / CaseTO-3P-3, SC-65-3 [1]

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