Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 2 A [1] |
| Base Product Number | 2SD1207 [1] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V [1] |
| Frequency - Transition | 150MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | 150°C (TJ) [1] |
| Power - Max | 1 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 50 V [1] |
| Package / Case | TO-226-3, TO-92-3 Long Body [1] |
Specification references[1]onsemi 2SD1207T vendor product record ↗
