2SD1207S representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

2SD1207S

TRANS NPN 50V 2A 3MP

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
50 V
Current - Collector (Ic) (Max)
2 A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Frequency - Transition
150MHz
Power - Max
1 W
Current - Collector Cutoff (Max)
100nA (ICBO)
Operating Temperature
150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-226-3, TO-92-3 Long Body
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

2SD1207S technical parameters
ParameterValue
Current - Collector (Ic) (Max)2 A [1]
Base Product Number2SD1207 [1]
Current - Collector Cutoff (Max)100nA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 100mA, 2V [1]
Frequency - Transition150MHz [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature150°C (TJ) [1]
Power - Max1 W [1]
Product StatusObsolete [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 1A [1]
Voltage - Collector Emitter Breakdown (Max)50 V [1]
Package / CaseTO-226-3, TO-92-3 Long Body [1]

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