2SC3598E representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

onsemi · exact orderable part

2SC3598E

NPN SILICON TRANSISTOR

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
120 V
Current - Collector (Ic) (Max)
200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic
800mV @ 5mA, 50mA
Frequency - Transition
500MHz
Power - Max
1.2 W
Current - Collector Cutoff (Max)
100nA (ICBO)
Operating Temperature
150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-225AA, TO-126-3
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

2SC3598E technical parameters
ParameterValue
Current - Collector (Ic) (Max)200 mA [1]
Current - Collector Cutoff (Max)100nA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V [1]
Frequency - Transition500MHz [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature150°C (TJ) [1]
Power - Max1.2 W [1]
Part StatusActive [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic800mV @ 5mA, 50mA [1]
Voltage - Collector Emitter Breakdown (Max)120 V [1]
Package / CaseTO-225AA, TO-126-3 [1]

Catalog relationships

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