2SB1167S representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

onsemi · exact orderable part

2SB1167S

POWER BIPOLAR TRANSISTOR, PNP

Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
100 V
Current - Collector (Ic) (Max)
3 A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic
500mV @ 150mA, 1.5A
Frequency - Transition
130MHz
Power - Max
1.2 W
Current - Collector Cutoff (Max)
1µA (ICBO)
Operating Temperature
150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-225AA, TO-126-3
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

2SB1167S technical parameters
ParameterValue
Current - Collector (Ic) (Max)3 A [1]
Current - Collector Cutoff (Max)1µA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 500mA, 5V [1]
Frequency - Transition130MHz [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature150°C (TJ) [1]
Power - Max1.2 W [1]
Product StatusActive [1]
Transistor TypePNP [1]
Vce Saturation (Max) @ Ib, Ic500mV @ 150mA, 1.5A [1]
Voltage - Collector Emitter Breakdown (Max)100 V [1]
Package / CaseTO-225AA, TO-126-3 [1]

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