2N7002T-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes2 source documents

Diodes Incorporated · exact orderable part

2N7002T-7

MOSFET N-CH 60V 115MA SOT-523

FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)
Rds On (Max) @ Id, Vgs
7.5Ohm @ 50mA, 5V
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2V @ 250µA
Power Dissipation (Max)
150mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseSOT-523
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT)

Technical parameters

Technical specifications

2N7002T-7 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C115mA (Ta) [2]
Drain to Source Voltage (Vdss)60 V [2]
Drive Voltage (Max Rds On, Min Rds On)5V, 10V [2]
FET TypeN-Channel [2]
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V [2]
MfrDiodes Incorporated [2]
Mounting TypeSurface Mount [2]
Operating Temperature-55°C~150°C(TJ) [2]
Power Dissipation (Max)150mW (Ta) [2]
Product StatusDiscontinued at Digi-Key [2]
Rds On (Max) @ Id, Vgs7.5Ohm @ 50mA, 5V [2]
TechnologyMOSFET (Metal Oxide) [2]
Vgs (Max)±20V [2]
Vgs(th) (Max) @ Id2V @ 250µA [2]
Package / CaseSOT-523 [2]

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