Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA [1] |
| Base Product Number | 2N6520 [1] |
| Current - Collector Cutoff (Max) | 50nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V [1] |
| Frequency - Transition | 200MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | 150°C (TJ) [1] |
| Power - Max | 625 mW [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 350 V [1] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads [1] |
Specification references[1]onsemi 2N6520TA vendor product record ↗
