2N6517G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

2N6517G

TRANS NPN 350V 0.5A TO92

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
350 V
Current - Collector (Ic) (Max)
500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Frequency - Transition
200MHz
Power - Max
625 mW
Current - Collector Cutoff (Max)
50nA (ICBO)
Operating Temperature
-55°C ~ 150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-226-3, TO-92-3 Long Body
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

2N6517G technical parameters
ParameterValue
Current - Collector (Ic) (Max)500 mA [1]
Base Product Number2N6517 [1]
Current - Collector Cutoff (Max)50nA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V [1]
Frequency - Transition200MHz [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max625 mW [1]
Product StatusObsolete [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA [1]
Voltage - Collector Emitter Breakdown (Max)350 V [1]
Package / CaseTO-226-3, TO-92-3 Long Body [1]

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2N6517G onsemi Datasheet, Specs and RFQ | MPNHarbor