Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA [1] |
| Base Product Number | 2N6427 [1] |
| Current - Collector Cutoff (Max) | 1µA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 625 mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN - Darlington [1] |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 500mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 40 V [1] |
| Package / Case | TO-226-3, TO-92-3 Long Body [1] |
Specification references[1]onsemi 2N6427G vendor product record ↗
