Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 25 A [1] |
| Base Product Number | 2N5886 [1] |
| Current - Collector Cutoff (Max) | 2mA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A, 4V [1] |
| Frequency - Transition | 4MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -65°C ~ 200°C (TJ) [1] |
| Power - Max | 200 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 80 V [1] |
| Package / Case | TO-204AA, TO-3 [1] |
Specification references[1]onsemi 2N5886G vendor product record ↗
