Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA [1] |
| Base Product Number | 2N5655 [1] |
| Current - Collector Cutoff (Max) | 100µA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 10mV [1] |
| Frequency - Transition | 10MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -65°C ~ 150°C (TJ) [1] |
| Power - Max | 20 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 10V @ 100mA, 500mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 250 V [1] |
| Package / Case | TO-225AA, TO-126-3 [1] |
Specification references[1]onsemi 2N5655 vendor product record ↗
