Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | 2N5639 [1] |
| Current - Drain (Idss) @ Vds (Vgs=0) | 25 mA @ 20 V [1] |
| FET Type | N-Channel [1] |
| Drain to Source Voltage (Vdss) | 30 V [1] |
| Mfr | onsemi [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 12V (VGS) [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -65°C~150°C(TJ) [1] |
| Power - Max | 310 mW [1] |
| Product Status | Obsolete [1] |
| Resistance - RDS(On) | 60 Ohms [1] |
| Voltage - Breakdown (V(BR)GSS) | 35 V [1] |
| Package / Case | TO-226-3, TO-92-3 Long Body [1] |
Specification references[1]onsemi 2N5639G vendor product record ↗
