2N5551TA representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

2N5551TA

TRANS NPN 160V 0.6A TO92-3

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
160 V
Current - Collector (Ic) (Max)
600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Frequency - Transition
100MHz
Power - Max
625 mW
Current - Collector Cutoff (Max)
50nA (ICBO)
Operating Temperature
-55°C ~ 150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting typeThrough Hole
PackingCut Tape (CT) Tape & Box (TB)

Technical parameters

Technical specifications

2N5551TA technical parameters
ParameterValue
Current - Collector (Ic) (Max)600 mA [1]
Base Product Number2N5551 [1]
Current - Collector Cutoff (Max)50nA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V [1]
Frequency - Transition100MHz [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max625 mW [1]
Product StatusActive [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA [1]
Voltage - Collector Emitter Breakdown (Max)160 V [1]
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads [1]

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