2N5308 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

onsemi · exact orderable part

2N5308

TRANS NPN DARL 40V 1.2A TO92-3

Transistor Type
NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)
40 V
Current - Collector (Ic) (Max)
1.2 A
DC Current Gain (hFE) (Min) @ Ic, Vce
7000 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic
1.4V @ 200µA, 200mA
Power - Max
625 mW
Current - Collector Cutoff (Max)
100nA (ICBO)
Operating Temperature
-55°C~150°C(TJ)
Product Status
Obsolete
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-226-3, TO-92-3 (TO-226AA)
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

2N5308 technical parameters
ParameterValue
Current - Collector (Ic) (Max)1.2 A [1]
Base Product Number2N5308 [1]
Current - Collector Cutoff (Max)100nA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce7000 @ 2mA, 5V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max625 mW [1]
Product StatusObsolete [1]
Transistor TypeNPN - Darlington [1]
Vce Saturation (Max) @ Ib, Ic1.4V @ 200µA, 200mA [1]
Voltage - Collector Emitter Breakdown (Max)40 V [1]
Package / CaseTO-226-3, TO-92-3 (TO-226AA) [1]

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