Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 1.2 A [1] |
| Base Product Number | 2N5307 [1] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2mA, 5V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 625 mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN - Darlington [1] |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200µA, 200mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 40 V [1] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) [1] |
Specification references[1]onsemi 2N5307 vendor product record ↗
