Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 200 mA [1] |
| Base Product Number | 2N4123 [1] |
| Current - Collector Cutoff (Max) | 50nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2mA, 1V [1] |
| Frequency - Transition | 250MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 625 mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 30 V [1] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) [1] |
Specification references[1]onsemi 2N4123BU vendor product record ↗
