Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 200 mA [1] |
| Base Product Number | 2N3906 [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V [1] |
| Frequency - Transition | 250MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 625 mW [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 40 V [1] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) [1] |
Specification references[1]onsemi 2N3906BU vendor product record ↗
