Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 200 mA [1] |
| Base Product Number | 2N39 [1] |
| Current - Collector Cutoff (Max) | 50nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V [1] |
| Frequency - Transition | 250MHz [1] |
| Mfr | NXP USA Inc. [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | 150°C (TJ) [1] |
| Power - Max | 500 mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 40 V [1] |
Specification references[1]NXP USA Inc. 2N3906,116 vendor product record ↗
