Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA [1] |
| Base Product Number | 2N3859 [1] |
| Current - Collector Cutoff (Max) | 500nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 1V [1] |
| Frequency - Transition | 250MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 625 mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Voltage - Collector Emitter Breakdown (Max) | 60 V [1] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) [1] |
Specification references[1]onsemi 2N3859A vendor product record ↗
