2ED2110S06MXUMA1 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Infineon Technologies · exact orderable part

2ED2110S06MXUMA1

LEVEL SHIFT SOI

Driven Configuration
High-Side and Low-Side
Gate Type
IGBT, N-Channel MOSFET
Channel Type
Independent
Number of Drivers
2
Voltage - Supply
10V ~ 20V
Current - Peak Output (Source, Sink)
2.5A, 2.5A
Logic Voltage - VIL, VIH
6V, 14V
Input Type
Non-Inverting
High Side Voltage - Max (Bootstrap)
650 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerInfineon Technologies
Package / case16-SOIC (0.295", 7.50mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

2ED2110S06MXUMA1 technical parameters
ParameterValue
Base Product Number2ED2110 [1]
Channel TypeIndependent [1]
Current - Peak Output (Source, Sink)2.5A, 2.5A [1]
Driven ConfigurationHigh-Side and Low-Side [1]
DigiKey ProgrammableNot Verified [1]
Gate TypeIGBT, N-Channel MOSFET [1]
Input TypeNon-Inverting [1]
High Side Voltage - Max (Bootstrap)650 V [1]
Logic Voltage - VIL, VIH6V, 14V [1]
MfrInfineon Technologies [1]
Mounting TypeSurface Mount [1]
Number of Drivers2 [1]
Operating Temperature-40°C ~ 125°C (TA) [1]
Product StatusActive [1]
Rise / Fall Time (Typ)25ns, 17ns [1]
Voltage - Supply10V ~ 20V [1]
Package / Case16-SOIC (0.295", 7.50mm Width) [1]

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