Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Channel Type | Independent [1] |
| Current - Peak Output (Source, Sink) | 1A, 2A [1] |
| Driven Configuration | High-Side and Low-Side [1] |
| Gate Type | IGBT, N-Channel MOSFET [1] |
| Input Type | Inverting [1] |
| High Side Voltage - Max (Bootstrap) | 650 V [1] |
| Logic Voltage - VIL, VIH | 0.8V, 2V [1] |
| Mfr | Infineon Technologies [1] |
| Mounting Type | Surface Mount [1] |
| Number of Drivers | 2 [1] |
| Operating Temperature | -40°C~125°C(TJ) [1] |
| Product Status | Active [1] |
| Rise / Fall Time (Typ) | 20ns, 20ns [1] |
| Voltage - Supply | 14V ~ 18V [1] |
| Package / Case | 18-SOIC (0.295", 7.50mm Width) [1] |
Specification references[1]Infineon Technologies 2ED020I06FI vendor product record ↗
