2ED020I06FI representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Infineon Technologies · exact orderable part

2ED020I06FI

HALF-BRIDGE PERIPHERAL DRIVER

Driven Configuration
High-Side and Low-Side
Gate Type
IGBT, N-Channel MOSFET
Channel Type
Independent
Number of Drivers
2
Voltage - Supply
14V ~ 18V
Current - Peak Output (Source, Sink)
1A, 2A
Logic Voltage - VIL, VIH
0.8V, 2V
Input Type
Inverting
High Side Voltage - Max (Bootstrap)
650 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerInfineon Technologies
Package / case18-SOIC (0.295", 7.50mm Width)
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

2ED020I06FI technical parameters
ParameterValue
Channel TypeIndependent [1]
Current - Peak Output (Source, Sink)1A, 2A [1]
Driven ConfigurationHigh-Side and Low-Side [1]
Gate TypeIGBT, N-Channel MOSFET [1]
Input TypeInverting [1]
High Side Voltage - Max (Bootstrap)650 V [1]
Logic Voltage - VIL, VIH0.8V, 2V [1]
MfrInfineon Technologies [1]
Mounting TypeSurface Mount [1]
Number of Drivers2 [1]
Operating Temperature-40°C~125°C(TJ) [1]
Product StatusActive [1]
Rise / Fall Time (Typ)20ns, 20ns [1]
Voltage - Supply14V ~ 18V [1]
Package / Case18-SOIC (0.295", 7.50mm Width) [1]

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