Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 2 A [1] |
| Base Product Number | 2DB1188 [1] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 3V [1] |
| Frequency - Transition | 120MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 1 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 32 V [1] |
| Package / Case | TO-243AA [1] |
Specification references[1]Diodes Incorporated 2DB1188P-13 vendor product record ↗
