Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 1 A [2] |
| Base Product Number | 2DB1132 [2] |
| Current - Collector Cutoff (Max) | 500nA (ICBO) [2] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 3V [2] |
| Frequency - Transition | 190MHz [2] |
| Mfr | Diodes Incorporated [2] |
| Mounting Type | Surface Mount [2] |
| Operating Temperature | -55°C ~ 150°C (TJ) [2] |
| Power - Max | 1 W [2] |
| Product Status | Active [2] |
| Transistor Type | PNP [2] |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA [2] |
| Voltage - Collector Emitter Breakdown (Max) | 32 V [2] |
| Package / Case | TO-243AA [2] |
Specification references[1]2DB1132R-13 delivered document ↗[2]Diodes Incorporated 2DB1132R-13 vendor product record ↗
