2DB1132P-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes2 source documents

Diodes Incorporated · exact orderable part

2DB1132P-13

TRANS PNP 32V 1A SOT89-3

Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
32 V
Current - Collector (Ic) (Max)
1 A
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 100mA, 3V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Frequency - Transition
190MHz
Power - Max
1 W
Current - Collector Cutoff (Max)
500nA (ICBO)
Operating Temperature
-55°C ~ 150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseTO-243AA
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

2DB1132P-13 technical parameters
ParameterValue
Current - Collector (Ic) (Max)1 A [2]
Base Product Number2DB1132 [2]
Current - Collector Cutoff (Max)500nA (ICBO) [2]
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 100mA, 3V [2]
Frequency - Transition190MHz [2]
MfrDiodes Incorporated [2]
Mounting TypeSurface Mount [2]
Operating Temperature-55°C ~ 150°C (TJ) [2]
Power - Max1 W [2]
Product StatusObsolete [2]
Transistor TypePNP [2]
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA [2]
Voltage - Collector Emitter Breakdown (Max)32 V [2]
Package / CaseTO-243AA [2]

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